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C# How to Access Custom Attribute from Unity

I have a custom Class that I want to use with a component. My current approach is to create an attached method in the class for convenience and to
public class MyClass
{
[SerializeField]
public MyTexture[] texture;

[SerializeField]
public Matrix4x4 transformationMatrix;

[SerializeField]
private bool hasTransform;

[SerializeField]
private string templateName;

[SerializeField]
private int transformFrequency;

[SerializeField]
private int updateCallBackID;

private void Start()
{
if(hasTransform)
{
//AttachMethod(target);
//myComponent.onComponentUpdate = Update;
}
}

public void AttachMethod(GameObject target)
{
GameObject myComponent = target.GetComponent();
if(myComponent)
{
myComponent.transform.localScale = new Vector3(1.0f, 1.0f, 1.0f);
}
}
}

However, that does not work. Every time I select the component in the inspector it
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. civil 3d free download mac os x, image product keygen, download keygen autocad,autocad 2012 64 bit. Autodesk, Autodesk 3ds max 2012 crack serial. win serial keygen download, auto cad 2011 free, autodesk maya 2012 keygen .1. Field of the Invention
The present invention relates to a semiconductor device including an oxide semiconductor and a manufacturing method thereof.
In this specification, a semiconductor device generally means a device which can function by utilizing semiconductor characteristics, and an electrooptic device, a semiconductor circuit, and an electronic appliance are all semiconductor devices.
2. Description of the Related Art
In recent years, technology for forming thin film transistors (TFTs) using a semiconductor thin film (having a thickness of approximately several to several hundreds of nanometers) formed over a substrate having an insulating surface has been attracting attention. Thin film transistors are widely applied to electronic devices such as ICs or electrooptic devices and have been rapidly developed particularly as switching elements for image display devices.
A silicon-based semiconductor material is widely known as a material for a thin film transistor; in addition, an oxide semiconductor has been attracting attention as another material.
For example, a thin film transistor formed using an oxide semiconductor is known as disclosed in Patent Document 1.
An amorphous oxide semiconductor film can be formed by a sputtering method or the like. However, when the sputtering method is used, a large amount of heavy metal contained in the target which constitutes the sputtering apparatus enters the film in many cases. Therefore, when the sputtering method is used, it is difficult to control the amount of heavy metal contained in the film; thus, there is a problem in that reliability of the TFT deteriorates. Therefore, the sputtering method is not suitable for a film formation method for mass production of TFTs in which large numbers of TFTs are formed on a substrate.
On the other hand, a technique in which a target containing nitrogen is used so as to prevent the deterioration of the oxide semiconductor film is disclosed in Patent Document 2.
In a case where a silicon-based semiconductor is used for a channel layer of a thin film transistor, in general, an amorphous silicon film is used as the silicon-based semiconductor. However, in a case where an oxide semiconductor is used, it is difficult to