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After the plasma is established, i.e., after the plasma source is powered, a number of processing steps may be executed. These steps, depending on the process being implemented, can include ion cleaning and/or modification, ion acceleration, substrate biasing, scanning, etching, etc. Each step typically incorporates a number of control parameters, e.g., temperature, flow rate, pressure, power, etc., which are set to achieve a desired result.
To ensure consistent processing and improve plasma performance, it is important that these control parameters be set to achieve a desired setpoint. One difficulty often encountered is that the process for achieving the desired setpoint can be highly nonlinear (i.e., it takes a very wide range of values to get the result sought). This difficulty can be especially acute when attempting to control parameters, such as source power, for plasma discharge. In the case of plasma discharge, for example, conventional control schemes typically employ an open-loop control scheme which simply attempts to operate a plasma with a fixed input power. In many cases
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